If you have any comments and suggestions we welcome to call the contact.
Address: B1309 Xin Zhong Fa Building Zhongguancun Street, No. 32 Haidian Beijing
Email:1043090496@qq.com
描述 | MOSFET N-CH 30V 1.2A SOT-23 |
RoHS | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
标准包装 | 3,000 |
类别 | 分离式半导体产品 |
家庭 | FET - 单 |
系列 | HEXFET® |
FET 型 | MOSFET N 通道,金属氧化物 |
FET 特点 | 逻辑电平门 |
漏极至源极电压(Vdss) | 30V |
电流 - 连续漏极(Id) @ 25° C | 1.2A |
开态Rds(最大)@ Id, Vgs @ 25° C | 250 毫欧 @ 910mA,10V |
Id 时的 Vgs(th)(最大) | 1V @ 250µA |
闸电荷(Qg) @ Vgs | 5nC @ 10V |
输入电容 (Ciss) @ Vds | 85pF @ 25V |
功率 - 最大 | 540mW |
安装类型 | 表面贴装 |
封装/外壳 | TO-236-3,SC-59,SOT-23-3 |
供应商设备封装 | Micro3?/SOT-23 |
包装 | 带卷 (TR) |
其它名称 | IRLML2803PBFTR |
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